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| ?2002 fairchild semiconductor corporation may 2002 ISL9R1560G2, isl9r1560p2, isl9r1560s2, isl9r1560s3s ISL9R1560G2, isl9r1560p2, isl9r1560s2, isl9r1560s3s rev. c ISL9R1560G2, isl9r1560p2, isl9r1560s2, isl9r1560s3s 15a, 600v stealth? diode general description the ISL9R1560G2, isl9r1560p2, isl9r1560s2 and isl9r1560s3s are stealth? diodes optimized for low loss performance in high frequency hard switched applications. the stealth? family exhibits low reverse recovery current (i rm(rec) ) and exceptionally soft recovery under typical operating conditions. this device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. the low i rm(rec) and short t a phase reduce loss in switching transistors. the soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. consider using the stealth? diode with an smps igbt to provide the most efficient and highest power density design at lower cost. formerly developmental type ta49410 . features soft recovery . . . . . . . . . . . . . . . . . . . . . . . . t b / t a > 1.2 fast recovery . . . . . . . . . . . . . . . . . . . . . . . . . t rr < 30ns operating temperature . . . . . . . . . . . . . . . . . . . . 175 o c reverse voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . 600v avalanche energy rated applications switch mode power supplies hard switched pfc boost diode ups free wheeling diode motor drive fwd smps fwd snubber diode device maximum ratings t c = 25c unless otherwise noted symbol parameter ratings units v rrm repetitive peak reverse voltage 600 v v rwm working peak reverse voltage 600 v v r dc blocking voltage 600 v i f(av) average rectified forward current (t c = 145 o c) 15 a i frm repetitive peak surge current (20khz square wave) 30 a i fsm nonrepetitive peak surge current (halfwave 1 phase 60hz) 200 a k a cathode (flange) cathode anode jedec style to-262 jedec to-220ac cathode (flange) anode n/c cathode (flange) cathode anode jedec to-263ab cathode (bottom side cathode anode metal) jedec style to-247 package symbol
1560?2002 fairchild semiconductor corporation ISL9R1560G2, isl9r1560p2, isl9r1560s2, isl9r1560s3s rev. c ISL9R1560G2, isl9r1560p2, isl9r1560s2, isl9r1560s3s package marking and ordering information electrical characteristics t c = 25 c unless otherwise noted off state characteristics on state characteristics dynamic characteristics switching characteristics thermal characteristics p d power dissipation 150 w e avl avalanche energy (1a, 40mh) 20 mj t j , t stg operating and storage temperature range -55 to 175 c t l t pkg maximum temperature for soldering leads at 0.063in (1.6mm) from case for 10s package body for 10s, see techbrief tb334 300 260 c c caution: stresses above those listed in ? absolute maximum ratings ? may cause permanent damage to the device. this is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specificatio n is not implied. device marking device package tape width quantity r1560g2 ISL9R1560G2 to-247 - - r1560p2 isl9r1560p2 to-220ac - - r1560s2 isl9r1560s2 to-262 - - r1560s3s isl9r1560s3s to-263ab 24mm 800 symbol parameter test conditions min typ max units i r instantaneous reverse current v r = 600v t c = 25 c - - 100 a t c = 125 c--1.0ma v f instantaneous forward voltage i f = 15a t c = 25 c-1.82.2v t c = 125 c - 1.65 2.0 v c j junction capacitance v r = 10v, i f = 0a - 62 - pf t rr reverse recovery time i f = 1a, di f /dt = 100a/ s, v r = 30v - 25 30 ns i f = 15a, di f /dt = 100a/ s, v r = 30v - 35 40 ns t rr reverse recovery time i f = 15a, di f /dt = 200a/ s, v r = 390v, t c = 25 c - 29.4 - ns i rm(rec) maximum reverse recovery current - 3.5 - a q rr reverse recovered charge - 57 - nc t rr reverse recovery time i f = 15a, di f /dt = 200a/ s, v r = 390v, t c = 125 c -90-ns s softness factor (t b /t a )-2.0- i rm(rec) maximum reverse recovery current - 5.0 - a q rr reverse recovered charge - 275 - nc t rr reverse recovery time i f = 15a, di f /dt = 800a/ s, v r = 390v, t c = 125 c -52-ns s softness factor (t b /t a ) - 1.36 - i rm(rec) maximum reverse recovery current - 13.5 - a q rr reverse recovered charge 390 - nc di m /dt maximum di/dt during t b - 800 - a/s r jc thermal resistance junction to case - - 1.0 c/w r ja thermal resistance junction to ambient to-247 - - 30 c/w r ja thermal resistance junction to ambient to-220 - - 62 c/w r ja thermal resistance junction to ambient to-262 - - 62 c/w r ja thermal resistance junction to ambient to-263 62 c/w symbol parameter ratings units 1560?2002 fairchild semiconductor corporation ISL9R1560G2, isl9r1560p2, isl9r1560s2, isl9r1560s3s rev. c ISL9R1560G2, isl9r1560p2, isl9r1560s2, isl9r1560s3s typical performance curves figure 1. forward current vs forward voltage figure 2. reverse current vs reverse voltage figure 3. t a and t b curves vs forward current figure 4. t a and t b curves vs di f /dt figure 5. maximum reverse recovery current vs forward current figure 6. maximum reverse recovery current vs di f /dt v f , forward voltage (v) i f , forward current (a) 30 25 20 0 0.5 1.0 1.25 2.0 2.25 175 o c 25 o c 100 o c 125 o c 150 o c 15 10 5 0.75 1.5 1.75 10 v r , reverse voltage (v) i r , reverse current ( a) 100 100 200 500 600 400 1000 1 0.1 175 o c 25 o c 100 o c 300 4000 75 o c 150 o c 125 o c i f , forward current (a) 0 0 20 40 60 80 100 10 30 t, recovery times (ns) t b at di f /dt = 200a/s, 500a/s, 800a/s v r = 390v, t j = 125 c 5152025 t b at di f /dt = 200a/s, 500a/s, 800a/s di f /dt, current rate of change (a/ s) 0 20 40 60 80 100 t, recovery times (ns) v r = 390v, t j = 125 c t b at i f = 30a, 15a, 7.5a 1000 1600 1400 400 200 600 800 1200 t a at i f = 30a, 15a, 7.5a i f , forward current (a) 2 6 8 10 12 14 16 i rm(rec) , max reverse recovery current (a) di f /dt = 800a/s di f /dt = 500a/s di f /dt = 200a/s v r = 390v, t j = 125 c 010 30 5 152025 4 di f /dt, current rate of change (a/ s) 0 5 10 15 20 25 1000 1600 v r = 390v, t j = 125 c i f = 30a i f = 7.5a i f = 15a 1400 400 200 600 800 1200 i rm(rec) , max reverse recovery current (a) 1560?2002 fairchild semiconductor corporation ISL9R1560G2, isl9r1560p2, isl9r1560s2, isl9r1560s3s rev. c ISL9R1560G2, isl9r1560p2, isl9r1560s2, isl9r1560s3s figure 7. reverse recovery softness factor vs di f /dt figure 8. reverse recovered charge vs di f /dt figure 9. junction capacitance vs reverse voltage figure 10. dc current derating curve figure 11. normalized maximum transient thermal impedance typical performance curves (continued) di f /dt, current rate of change (a/ s) 0.5 1.0 1.5 2.0 2.5 v r = 390v, t j = 125 c i f = 30a i f = 15a i f = 7.5a s, reverse recovery softness factor 1000 1600 1400 400 200 600 800 1200 di f /dt, current rate of change (a/ s) 200 300 400 500 600 700 v r = 390v, t j = 125 c i f = 30a i f = 15a i f = 7.5a q rr , reverse recovered charge (nc) 1000 1600 1400 400 200 600 800 1200 400 0 800 600 200 1200 v r , reverse voltage (v) c j , junction capacitance (pf) 0.1 1 100 10 1000 4 0 150 155 165 140 175 160 12 14 16 t c , case temperature ( o c) i f(av) , average forward current (a) 170 145 2 10 6 8 t, rectangular pulse duration (s) 10 -5 10 -2 10 -1 z ja, normalized thermal impedance 0.01 10 -4 10 -3 single pulse 10 0 0.1 10 1 duty cycle - descending order 0.5 0.2 0.1 0.05 0.01 0.02 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z ja x r ja + t a p dm t 1 t 2 1.0 1560?2002 fairchild semiconductor corporation ISL9R1560G2, isl9r1560p2, isl9r1560s2, isl9r1560s3s rev. c ISL9R1560G2, isl9r1560p2, isl9r1560s2, isl9r1560s3s figure 12. t rr test circuit figure 13. t rr waveforms and definitions figure 14. avalanche energy test circuit figure 15. avalanche current and voltage waveforms typical performance curves (continued) r g l v dd mosfet current sense dut v ge t 1 t 2 v ge amplitude and t 1 and t 2 control i f r g control di f /dt + - dt di f i f t rr t a t b 0 i rm 0.25 i rm dut current sense + lr v dd r < 0.1 ? e avl = 1/2li 2 [v r(avl) /(v r(avl) - v dd )] q 1 = igbt (bv ces > dut v r(avl) ) - v dd q 1 i = 1a l = 40mh v dd = 50v iv t 0 t 1 t 2 i l v av l t i l test circuit and waveforms !"#$ %"& '(% & % )'"% &' ! %*$%('( (! '&$$% "'+ '% ,'*- %& ''.$ '- '( $$ %+ !% !"'* %("& % % $% %( / 0 ! 11 2 2 34 5 1 23 45 11 3 45 1 1 1 2 1 3 21 6 2 7 1 21 11 2 1 21 11 23 2 $ 2 ( ( % 1 1 1 1 2 2 1 2 3 11 2 1 2 1 1 2 1 1 1 2 1 2 " $ $ ( $ ! " ! #$ ! $ % $& ' ( ) !! *! * + ,$ " ! % - $ " ./ " .0 " .1 2 2 , " $! $ 8$%-' 3% 3 $ 45 |
Price & Availability of ISL9R1560G2
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